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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10049881 B1

PDFFull Text
Date of Patent:
Aug. 14, 2018

Filed:

Jun. 28, 2012

Method and apparatus for selective nitridation process

Applicants:

Matthew S. Rogers, Mountain View, CA (US);

Roger Curtis, Stockton, CA (US);

Lara Hawrylchak, Gilroy, CA (US);

Ken Kaung Lai, San Jose, CA (US);

Bernard L. Hwang, Santa Clara, CA (US);

Jeffrey Tobin, Mountain View, CA (US);

Christopher Olsen, Fremont, CA (US);

Malcolm J. Bevan, Santa Clara, CA (US);

Inventors:

Matthew S. Rogers, Mountain View, CA (US);

Roger Curtis, Stockton, CA (US);

Lara Hawrylchak, Gilroy, CA (US);

Ken Kaung Lai, San Jose, CA (US);

Bernard L. Hwang, Santa Clara, CA (US);

Jeffrey Tobin, Mountain View, CA (US);

Christopher Olsen, Fremont, CA (US);

Malcolm J. Bevan, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan LLP

Primary Examiner:

Gordon Baldwin

Assistant Examiner:

Charlee J C Bennett

Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01); H01L 21/3211 (2013.01); H01L 27/11524 (2013.01);
Abstract

Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

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