Kiyosu, Japan

Kazuya Hasegawa


Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2015-2021

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9 patents (USPTO):Explore Patents

Title: Kazuya Hasegawa: Innovator in Semiconductor Technology

Introduction

Kazuya Hasegawa is a prominent inventor based in Kiyosu, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on improving the manufacturing processes and efficiency of semiconductor devices.

Latest Patents

Hasegawa's latest patents include a method of manufacturing semiconductor devices that reduces the likelihood of corner formation in n-type semiconductor layers. This innovative method involves forming a gallium nitride (GaN) based n-type semiconductor layer, creating a groove through etching, and subsequently forming a p-type semiconductor layer. Another notable patent is for a Schottky barrier diode, which features a semiconductor layer with a surface that includes multiple recesses. This design ensures that photoresist is not left in unintended areas, enhancing the overall efficiency of the device.

Career Highlights

Kazuya Hasegawa is currently employed at Toyoda Gosei Co., Ltd., where he continues to develop cutting-edge semiconductor technologies. His expertise in this field has positioned him as a key player in advancing semiconductor manufacturing techniques.

Collaborations

Hasegawa has collaborated with notable colleagues such as Tohru Oka and Nariaki Tanaka. Their combined efforts have contributed to the successful development of innovative semiconductor solutions.

Conclusion

Kazuya Hasegawa's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in semiconductor manufacturing processes.

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