The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jul. 03, 2014
Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;
TOYODA GOSEI CO., LTD., Aichi-pref., JP;
Abstract
A semiconductor device includes: a p-type semiconductor layer mainly made of GaN; an n-type semiconductor layer mainly made of GaN and joined with the p-type semiconductor layer; a protective film arranged to coat the p-type semiconductor layer and the n-type semiconductor layer; a gate insulating film arranged to coat the p-type semiconductor layer and the n-type semiconductor layer; and a gate electrode joined with the gate insulating film. The protective film includes: a first layer made of AlOand arranged adjacent to the p-type semiconductor layer and the n-type semiconductor layer to coat an edge of a p-n junction surface; a second layer made of an electrical insulation material different from AlOand formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The gate insulating film is placed inside of the opening structure.