The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Jul. 28, 2017
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
There is provided a semiconductor device configured to include a plurality of semiconductor units formed in a semiconductor layer. Each of the semiconductor units comprises a mesa portion; a Schottky electrode formed on the mesa portion; an insulating film formed continuously on another portion of the Schottky electrode that is nearer to an edge of an upper face of the mesa portion than one portion of the Schottky electrode, on a side face of the mesa portion, and on a surface of the semiconductor layer other than the mesa portion; and a wiring electrode formed on the Schottky electrode and the insulating film. An angle between the side face of the mesa portion and the surface of the semiconductor layer is 90 degrees. A part of the wiring electrode is placed between the insulating films formed on opposed side faces of adjacent mesa portions. The insulating films formed on the opposed side faces are interconnected on the surface of the semiconductor layer, such as to separate the part of the wiring electrode from the semiconductor layer.