The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Dec. 03, 2015
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventors:
Tohru Oka, Kiyosu, JP;
Kazuya Hasegawa, Kiyosu, JP;
Noriaki Murakami, Kiyosu, JP;
Takahiro Sonoyama, Kiyosu, JP;
Nariaki Tanaka, Kiyosu, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 21/02356 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/66204 (2013.01); H01L 29/66212 (2013.01); H01L 29/7786 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device comprises: a semiconductor layer; and an insulating film that is formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.
Oka, Tohru. (2017). Semiconductor device including an insulating layer which includes negatively charged microcrystal (U.S. Patent No. 9691846). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9691846
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile