The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2018
Filed:
May. 24, 2017
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventors:
Tohru Oka, Kiyosu, JP;
Kazuya Hasegawa, Kiyosu, JP;
Noriaki Murakami, Kiyosu, JP;
Takahiro Sonoyama, Kiyosu, JP;
Nariaki Tanaka, Kiyosu, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 21/02356 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/66204 (2013.01); H01L 29/66212 (2013.01); H01L 29/7786 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device includes a substrate, a semiconductor layer that is formed on the substrate and includes a pn junction or a hetero-junction, an insulating film that is formed on the semiconductor layer to be in contact with an end of the pn junction or an end of the hetero-junction, and an electrode formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.