The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Jul. 03, 2014
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;

Inventors:

Yukihisa Ueno, Kiyosu, JP;

Toru Oka, Kiyosu, JP;

Kazuya Hasegawa, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Aichi-pref., JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/80 (2006.01); H01L 29/66 (2006.01); H01L 23/31 (2006.01); H01L 21/31 (2006.01); H01L 29/20 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 29/2003 (2013.01); H01L 29/872 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes; a semiconductor layer mainly made of GaN; a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; and an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer. The protective film includes: a first layer made of AlOand arranged adjacent to the semiconductor layer; a second layer made of an electrical insulation material different from AlOand formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The electrode is located inside of the opening structure.


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