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For the Inventor, By the Inventor

Singapore, Singapore

Kazutaka Yamane

This inventor holds 17 USPTO granted patents and 8 published patent applications, primarily in Magnetic Memory Technology. Top assignees: Globalfoundries Singapore Pte. Ltd., Globalfoundries U.S. Inc.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazutaka Yamane. Retrieved from https://idiyas.com/inventor/kazutaka-yamane-deyuf6dv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 94.1

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 15(Granted Patents)


Company Filing History:

goldMedal15 out of 1,064 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal2 out of 1,093 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2018-2025

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Areas of Expertise:
Magnetic Field Sensor
Magnetic Tunneling Junction
Spin Diode
Tunnel Magnetoresistance
Memory Device
Integrated Circuits
Magnetic Random Access Memory
Ferromagnetic Material
17 patents (USPTO):Explore Patents
1. 12284925 - Memory device having a switching element thicker at a first side than at a second side and method of forming the same (2025-04-21),
2. 12032041 - Magnetic field sensor (2024-07-09),
3. 11894029 - Spiking neural network hardware based on magnetic-tunnel-junction layer stacks (2024-02-06),
4. 11791083 - Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures (2023-10-17),
5. 11751483 - Spin diode devices (2023-09-05),
6. 11747412 - Magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors (2023-09-05),
7. 11719773 - Magnetic field sensor with MTJ elements arranged in series (2023-08-08),
8. 11682514 - Memory cell having a free ferromagnetic material layer with a curved, non-planar surface and methods of making such memory cells (2023-06-20),
9. 11574758 - Magnetic field sensor using different magnetic tunneling junction (MTJ) structures (2023-02-07),
10. 11513175 - Tunnel magnetoresistance sensor devices and methods of forming the same (2022-11-29),
11. 10818837 - Seed layers for a non-volatile memory element (2020-10-27),
12. 10529917 - High energy barrier perpendicular magnetic tunnel junction element with reduced temperature sensitivity (2020-01-07),
13. 10468457 - Magnetic random access memory structures and integrated circuits with cobalt anti-parallel layers, and methods for fabricating the same (2019-11-05),
14. 10381554 - Integrated circuits with magnetic tunnel junctions and methods for fabricating the same (2019-08-13),
15. 10297745 - Composite spacer layer for magnetoresistive memory (2019-05-21),

Title: Kazutaka Yamane: Pioneering Inventor from Singapore

Introduction: Kazutaka Yamane is a renowned inventor based in Singapore, known for his groundbreaking contributions to various technological fields.

Latest Patents: Kazutaka Yamane holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his innovative mindset and forward-thinking approach.

Career Highlights: With over two decades of experience in the tech industry, Kazutaka Yamane has worked with leading research institutions and multinational companies, spearheading projects that have revolutionized the way we interact with technology.

Collaborations: Throughout his career, Kazutaka Yamane has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of creativity and excellence in all his projects.

Conclusion: Kazutaka Yamane's passion for innovation and his relentless drive to push the boundaries of technology make him a true pioneer in the field of inventing, inspiring the next generation of inventors to dream big and create the impossible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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