The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2025

Filed:

Aug. 17, 2023
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Ju Dy Lim, Singapore, SG;

Mei Zhen Ng, Singapore, SG;

Kazutaka Yamane, Singapore, SG;

Chim Seng Seet, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2022.12); H10N 70/20 (2022.12);
U.S. Cl.
CPC ...
H10N 70/828 (2023.01); H10N 70/021 (2023.01); H10N 70/063 (2023.01); H10N 70/231 (2023.01); H10N 70/24 (2023.01); H10N 70/826 (2023.01);
Abstract

A memory device may be provided, including a first planar electrode, a second planar electrode, and a switching element arranged between the first planar electrode and the second planar electrode to where a first side of the switching element is arranged over the first planar electrode and where a second side of the switching element is arranged under the second planar electrode. The switching element is thicker at the first side than the second side, and the switching element is configured to provide a conductive filament formation region.


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