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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10468457 B1

PDFFull Text
Date of Patent:
Nov. 05, 2019

Filed:

Jul. 05, 2018

Magnetic random access memory structures and integrated circuits with cobalt anti-parallel layers, and methods for fabricating the same

Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Dinggui Zeng, Singapore, SG;

Kah Wee Gan, Singapore, SG;

Kazutaka Yamane, Singapore, SG;

Assignee:

GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;

Attorney:

Thompson Hine LLP

Primary Examiner:

Hoai V Ho

Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The spin transfer torque magnetic random access memory structure further includes a fixed layer over the base layer. The fixed layer includes anti-parallel layers including cobalt tungsten/platinum (CoW/Pt) bilayers, cobalt molybdenum/platinum (CoMo/Pt) bilayers, or bilayers including a combination of at least two materials selected from cobalt (Co), tungsten (W), molybdenum (Mo), platinum (Pt), palladium (Pd) or iridium (Ir). Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the fixed layer and a top electrode over the MTJ element.

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