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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11682514 B1

PDFFull Text
Date of Patent:
Jun. 20, 2023

Filed:

Aug. 19, 2020

Memory cell having a free ferromagnetic material layer with a curved, non-planar surface and methods of making such memory cells

Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Hemant Dixit, Halfmoon, NY (US);

Vinayak Bharat Naik, Singapore, SG;

Kazutaka Yamane, Singapore, SG;

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorneys:

Yee Tze Lim

Hoffman Warnick LLC

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H01F 10/3254 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

An illustrative memory cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) structure positioned above the bottom electrode and below the top electrode. In this example, the MTJ structure includes a first ferromagnetic material layer positioned above the bottom electrode, a non-magnetic insulation layer positioned above the first ferromagnetic material layer and a second ferromagnetic material layer positioned on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the ferromagnetic material layer.

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