Globalfoundries Singapore Pte. Ltd.

Globalfoundries U.S. Inc.

Kazutaka Yamane

Vinayak Bharat Naik

Hemant M Dixit

Kangho Lee

Eng Huat Toh

Chim Seng Seet

Seungmo Noh

Taiebeh Tahmasebi

Eng-Huat Toh

Shyue Seng Tan

Kiok Boone Elgin Quek

Dimitri Houssameddine

Ping Zheng

Chenchen Jacob Wang

Kah Wee Gan

Wen Siang Lew

Mei Zhen Ng

Wai Cheung Law

Jia Hao Lim

Ganesh Kolliyil Rajan

Dinggui Zeng

Grayson Dao Hwee Wong

Yuichi Otani

Ju Dy Lim

Joel Tan

A memory device may be provided, including a first planar electrode, a second planar electrode, and a switching element arranged between the first planar electrode and the second planar electrode to where a first side of the switching element is arranged over the first planar electrode and where a second side of the switching element is arranged under the second planar electrode. The switching element is thicker at the first side than the second side, and the switching element is configured to provide a conductive filament formation region.

Memory device having a switching element thicker at a first side than at a second side and method of forming the same

The present disclosure relates to sensors and, more particularly, to magnetic field sensors. More specifically, a structure includes a package with a wraparound geometry and discontinuous ends, and includes a low permeability magnetic material.

Magnetic field sensor

Structures including a magnetic-tunnel-junction layer stack and methods of forming such structures. The structure comprises a magnetic-tunneling-junction layer stack including a reference layer, an antiferromagnetic layer, a free layer positioned between the reference layer and the antiferromagnetic layer, and a tunnel barrier layer positioned between the reference layer and the free layer. The antiferromagnetic layer has a static magnetic field with a magnetization, and the antiferromagnetic layer is antiferromagnetically coupled to the free layer.

Spiking neural network hardware based on magnetic-tunnel-junction layer stacks

The present disclosure relates to integrated circuits, and more particularly, a tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures and methods of manufacture and operation. The structure includes: a first magnetic tunneling junction (MTJ) structure on a first level; a second MTJ structure on a same wiring level as the first MTJ structure; and at least one metal line between the first MTJ structure and the second MTJ structure.

Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures

The present disclosure relates to integrated circuits, and, more particularly, to a magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors, and methods of manufacture and operation. The structure includes: a first portion of a circuit including a first MTJ structure and a first resistor coupled in series between a first voltage source and a second voltage source; and a second portion of the circuit including a second MTJ structure and a second resistor coupled in series between the first voltage source and the second voltage source. The first portion and the second portion are coupled in parallel between the first voltage source and the second voltage source.

Magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors

According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer comprising an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy.

Spin diode devices

A magnetic field sensor may include a plurality of MTJ elements. Each MTJ element of has a state indicated by a magnetic moment direction of a sensing layer relative to a pinned, reference layer in an absence of an external magnetic field. The plurality of MTJ elements are arranged into two identical sets of at least two MTJ elements, where each MTJ element in each respective set has a different state. The states of the MTJ elements are arranged in a manner to measure the external magnetic field regardless of the direction of the external magnetic field. The MTJ elements include identical layers, and are electrically serially connected.

Magnetic field sensor with MTJ elements arranged in series

An illustrative memory cell disclosed herein includes a bottom electrode, a top electrode positioned above the bottom electrode and an MTJ (Magnetic Tunnel Junction) structure positioned above the bottom electrode and below the top electrode. In this example, the MTJ structure includes a first ferromagnetic material layer positioned above the bottom electrode, a non-magnetic insulation layer positioned above the first ferromagnetic material layer and a second ferromagnetic material layer positioned on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the ferromagnetic material layer.

Memory cell having a free ferromagnetic material layer with a curved, non-planar surface and methods of making such memory cells

The present disclosure relates to integrated circuits, and more particularly, to a highly sensitive tunnel magnetoresistance sensor (TMR) with a Wheatstone bridge for field/position detection in integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: a first magnetic tunneling junction (MTJ) structure on a first device level; and a second magnetic tunneling junction (MTJ) structure on a different device level than the first MTJ structure. The second MTJ structure includes properties different than the first MTJ structure.

Magnetic field sensor using different magnetic tunneling junction (MTJ) structures

A semiconductor device may be provided including a first series portion and a second series portion electrically connected in parallel with the first series portion. The first series portion may include a first MTJ stack and a first resistive element electrically connected in series. The second series portion may include a second MTJ stack and a second resistive element electrically connected in series. The first resistive element may include a third MTJ stack and the second resistive element may include a fourth MTJ stack. The first, second, third, and fourth MTJ stacks may include a same number of layers, which may include a fixed layer, a free layer, and a tunnelling barrier layer between the fixed layer and the free layer. Alternatively, the first resistive element may include a first transistor and the second resistive element may include a second transistor.

Tunnel magnetoresistance sensor devices and methods of forming the same

Structures for a non-volatile memory element and methods of fabricating a structure for a non-volatile memory element. The structure includes a bottom electrode, a seed layer on the bottom electrode, and a magnetic-tunneling-junction layer stack on the seed layer. The seed layer is composed of a nickel-chromium-ruthenium alloy including ruthenium in an amount ranging from seven atomic percent by weight to eighty-four atomic percent by weight.

Seed layers for a non-volatile memory element

A magnetic tunneling junction (MTJ) with a free layer that is less temperature sensitive and is reflow compatible at 260&#xb0; C. The magnetic free layer may include various configurations, such as a single as-deposited crystalline magnetic layer or a composite free layer with more than one magnetic layers or a combination of composite and single magnetic layers. The layers of the composite magnetic free layer may include as-deposited crystalline magnetic free layers or a combination of as-deposited crystalline and as-deposited amorphous magnetic layers, with or without a spacer layer. An interface layer may be provided at an interface between the free layer and adjacent layer to apply tensile stress on the free layer in the direction perpendicular to the in-plane direction to enhance perpendicular magnetic anisotropy (PMA) of the free layer.

High energy barrier perpendicular magnetic tunnel junction element with reduced temperature sensitivity

Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The spin transfer torque magnetic random access memory structure further includes a fixed layer over the base layer. The fixed layer includes anti-parallel layers including cobalt tungsten/platinum (CoW/Pt) bilayers, cobalt molybdenum/platinum (CoMo/Pt) bilayers, or bilayers including a combination of at least two materials selected from cobalt (Co), tungsten (W), molybdenum (Mo), platinum (Pt), palladium (Pd) or iridium (Ir). Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the fixed layer and a top electrode over the MTJ element.

Magnetic random access memory structures and integrated circuits with cobalt anti-parallel layers, and methods for fabricating the same

Integrated circuits and methods for fabricating integrated circuits are provided. In one example, an integrated circuit includes a magnetic tunnel junction. The magnetic tunnel junction includes a fixed layer structure, a free layer structure, and a barrier layer disposed between the fixed layer structure and the free layer structure. The fixed layer structure includes a first magnetic layer and a second magnetic layer that is disposed between the first magnetic layer and the barrier layer. The first magnetic layer is configured to produce a first magnetic moment that substantially correlates to a second magnetic moment of the second magnetic layer as a function of temperature.

Integrated circuits with magnetic tunnel junctions and methods for fabricating the same

A bottom pinned perpendicular magnetic tunnel junction (pMTJ) with high TMR which can withstand high temperature back-end-of-line (BEOL) processing is disclosed. The pMTJ includes a composite spacer layer between a SAF layer and a reference layer of the fixed magnetic layer of the pMTJ. The composite spacer layer includes a first non-magnetic (NM) spacer layer, a magnetic (M) spacer layer disposed over the first NM spacer layer and a second NM spacer layer disposed over the M layer. The M layer is a magnetically continuous amorphous layer, which provides a good template for the reference layer.

Growing community of inventors

Singapore, Singapore

Kazutaka Yamane