Sagamihara, Japan

Kazufumi Sato

This inventor holds 39 USPTO granted patents, primarily in Photoresist Technology. Top assignees: Tokyo Ohka Kogyo Co., Ltd., Daito Chemix Corporation. Active years: 1998-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazufumi Sato. Retrieved from https://idiyas.com/inventor/kazufumi-sato

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 97.4

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 345(Granted Patents)


Location History:

  • Sagamihara, JP (1998 - 2005)
  • Kanagawa, JP (2003 - 2014)
  • Kawasaki, JP (2010 - 2018)

Company Filing History:


Years Active: 1998-2024

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Areas of Expertise:
Photoresist Composition
Lithography Method
Semiconductor Device
Nanoimprint Lithography
Patterning Method
Chemical-Amplification
Resist Pattern
Photosensitive Resin
Chemical-Sensitization
Positive-Working
Coating Composition
Multilayered Resist
39 patents (USPTO):Explore Patents

Title: Kazufumi Sato: Innovator in Resist Technology

Introduction

Kazufumi Sato, based in Sagamihara, Japan, is a distinguished inventor with an impressive portfolio of 39 patents focused on advancements in resist technology. His work significantly impacts the fields of semiconductor manufacturing and photolithography.

Latest Patents

Among his most recent innovations are two noteworthy patents. The first, titled "Resist composition and method of forming resist pattern," describes a specialized resist composition that includes a silicon-containing resin combined with an acid generator component. This combination generates an acid upon exposure and integrates a photodecomposable base to regulate the acid diffusion efficiently. Notably, the silicon content in the resin ranges from 20% to 25%, optimizing performance.

The second patent, "Resist pattern forming method and developer for lithography," outlines a method for creating resist patterns. This process includes forming a resist film on a support with a resist composition, exposing the resist film, and then developing it using a specific developer. This developer contains a basic compound and tetrabutylammonium hydroxide, with a precise concentration between 2.5% and 2.8% by mass.

Career Highlights

Kazufumi Sato has contributed his expertise to notable companies in the field. He has worked at Tokyo Ohka Kogyo Co., Ltd. and Daito Chemix Corporation, where he was instrumental in developing cutting-edge resist technologies that enhance lithographic processes.

Collaborations

Throughout his career, Sato has collaborated with prominent colleagues, including Kazuyuki Nitta and Toshimasa Nakayama. These partnerships have been pivotal in driving innovative approaches to resist compositions and pattern development.

Conclusion

Kazufumi Sato stands out as a key figure in the innovation of resist technology, with a strong portfolio of patents that showcase his expertise and ingenuity. His contributions to the industry not only enhance semiconductor manufacturing processes but also pave the way for future advancements in lithography.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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