The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

May. 30, 2007
Applicants:

Kazufumi Sato, Kanagawa, JP;

Tomotaka Yamada, Kanagawa, JP;

Inventors:

Kazufumi Sato, Kanagawa, JP;

Tomotaka Yamada, Kanagawa, JP;

Assignee:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 59/02 (2006.01); B29C 71/04 (2006.01); G03F 7/00 (2006.01); G03F 7/038 (2006.01); G03F 7/075 (2006.01); B82Y 40/00 (2011.01); B82Y 10/00 (2011.01); B29K 85/00 (2006.01); B29C 35/08 (2006.01);
U.S. Cl.
CPC ...
B29C 59/026 (2013.01); G03F 7/0002 (2013.01); G03F 7/0382 (2013.01); B29C 71/04 (2013.01); G03F 7/0757 (2013.01); B29K 2085/00 (2013.01); B82Y 40/00 (2013.01); B29C 2035/0827 (2013.01); B82Y 10/00 (2013.01); Y10S 977/887 (2013.01);
Abstract

A method of forming a resist pattern of high aspect ratio excelling in etching resistance by the use of nanoimprint lithography. The method of forming a resist pattern by nanoimprint lithography comprises the steps of disposing organic layer () on support (); providing resist layer () on the organic layer () with the use of chemical amplification type negative resist composition containing silsesquioxane resin (A); pressing light transmission allowing mold () with partial light shielding portion () against the resist layer () and thereafter carrying out exposure from the upside of the mold (); and detaching the mold ().


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