The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2004
Filed:
Aug. 28, 2001
Satoshi Maemori, Sagamihara, JP;
Kazufumi Sato, Sagamihara, JP;
Kazuyuki Nitta, Ebina, JP;
Katsumi Oomori, Chigasaki, JP;
Kazuo Tani, Kanagawa-ken, JP;
Yohei Kinoshita, Sagamihara, JP;
Tomotaka Yamada, Atsugi, JP;
Tokyo Ohka Kogyo Co., Ltd., Kanagawa-ken, JP;
Abstract
The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23° C. to dissolve away the resist layer.