Yokohama, Japan

Katsuyuki Aoki

This inventor holds 23 USPTO granted patents and 14 published patent applications and 6 EPO patents, primarily in Silicon Nitride Technology. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd., Ebara Corporation. Active years: 1996-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuyuki Aoki. Retrieved from https://idiyas.com/inventor/katsuyuki-aoki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 87.0

 

Average Co-Inventor Count = 3.5

ph-index = 5

Forward Citations = 204(Granted Patents)


Location History:

  • Fukaya, JP (1999 - 2001)
  • Saitama-ken, JP (2003)
  • Honjo, JP (2004)
  • Tokyo, JP (1996 - 2009)
  • Kanagawa, JP (2019)
  • Yokohama Kanagawa, JP (2022)
  • Yokohama, JP (1997 - 2023)

Company Filing History:


Years Active: 1996-2025

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Areas of Expertise:
Silicon Nitride
Sintered Body
Circuit Board
Fuel Gasification
Polishing Apparatus
Cathode-Ray Tube
Conductive Film
Magnetic Levitation
Thermal Conductivity
Manufacturing Method
Wear Resistant Member
23 patents (USPTO):Explore Patents

Title: Katsuyuki Aoki: Innovating Silicon Nitride Technologies

Introduction

Katsuyuki Aoki is an accomplished inventor based in Yokohama, Japan, with a significant portfolio of 22 patents. His work primarily focuses on silicon nitride technologies, contributing valuable innovations to the fields of materials science and electronics.

Latest Patents

Among his latest patents, Aoki has developed a silicon nitride sintered body, silicon nitride substrate, and silicon nitride circuit board. The silicon nitride sintered body consists of silicon nitride crystal grains and a grain boundary phase, where dislocation defect portions exist within some of the crystal grains. Notably, the criteria for the percentage of silicon nitride crystal grains are outlined, indicating that at least 50% and not more than 100% of the grains in any sampled cross-section should have completely visible contours. Additionally, the silicon nitride substrate is optimized with a plate thickness ranging from 0.1 mm to 0.4 mm, which significantly enhances the temperature coefficient of transmission characteristics when used in silicon nitride circuit boards. Moreover, Aoki’s methods for evaluating dielectric losses demonstrate a strong performance across varying frequencies, ensuring low losses through precise engineering.

Career Highlights

Aoki has had a noteworthy career, having worked for prominent companies such as Toshiba Corporation and Toshiba Materials Co., Ltd. His contributions to these organizations have led to groundbreaking advancements in silicon nitride applications, solidifying his reputation in the industry.

Collaborations

Throughout his career, Katsuyuki Aoki has collaborated with esteemed colleagues, including Hisashi Chigusa and Michiyo Abe. Their joint efforts have propelled innovations in the manufacturing and application of silicon nitride materials, showcasing the strength of teamwork in the realm of scientific research.

Conclusion

Katsuyuki Aoki's dedication to innovating silicon nitride technologies has resulted in substantial advancements in materials science. With his impressive portfolio of patents and collaborations with leading professionals in the field, Aoki continues to influence the evolution of electronic materials with his cutting-edge inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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