Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Ebara Corporation

Katsuyuki Aoki

Hisashi Chigusa

Michiyo Abe

Norio Kimura

Takashi Sano

Jun Momma

Hiroshi Hashimoto

Shuichi Nagato

Norihisa Miyoshi

Seiichiro Toyoda

Shugo Hosoda

Noritaka Nakayama

Katsutoshi Naruse

Nobutaka Kashima

Shinji Sekikawa

Satoshi Takahashi

Seiji Ishikawa

Takayuki Fukasawa

Kai Funaki

Haruhiko Yamaguti

Kentaro Iwai

Hiroyuki Shinozaki

Hozumi Yasuda

Yukio Ikeda

Michiyasu Komatsu

Keisuke Namiki

Satoshi Mori

Masayoshi Hirose

You Ishii

Yoichi Kanemitsu

Masao Matsumura

Yuji Shirao

Katsuaki Usui

Yutaka Abe

Kiyotaka Kawashima

Yoshinori Takahashi

Minoru Takao

Fumio Kondo

Takayoshi Kawamoto

Takeshi Yoshioka

Masaaki Kajiyama

Daiki Takahashi

Masaru Nakaniwa

Masato Eguchi

Hiroyoshi Fukasawa

Kunio Tateishi

The sliding member according to the embodiment includes a silicon nitride sintered body that includes silicon nitride crystal grains and a grain boundary phase, in which a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 10%. The percentage is more preferably not less than 0% and not more than 3%.

Sliding member, and bearing, motor, and drive device using the same

In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.

Silicon nitride sintered body, silicon nitride substrate, and silicon nitride circuit board

A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value &#x3b5;of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value &#x3b5;of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |&#x3b5;&#x2212;&#x3b5;|&#x2264;0.1.

Sintered body, substrate, circuit board, and manufacturing method of sintered boy

Sintered body, substrate, circuit board, and manufacturing method of sintered body

In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 &#x3bc;m&#xd7;50 &#x3bc;m observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.

Silicon nitride substrate and silicon nitride circuit board

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m&#xb7;K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/mm or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

Silicon nitride substrate and silicon nitride circuit board using the same

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m&#xb7;K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3&#xb1;0.2&#xb0;, 29.7&#xb1;0.2&#xb0;, 27.0&#xb1;0.2&#xb0;, and 36.1&#xb1;0.2&#xb0; are expressed as I, I, I, and I, a peak ratio (I)/(I+I) satisfies a range of 0.01 to 0.08, and a peak ratio (I)/(I+I) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m&#xb7;K or more, and excellence in insulating properties and strength.

High thermal conductive silicon nitride sintered body, and silicon nitride substrate and silicon nitride circuit board and semiconductor apparatus using the same

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m&#xb7;K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/rum or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m&#xb7;K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (TT) of a total length Tof the grain boundary phase in a thickness direction with respect to a thickness Tof the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/mm or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

The present invention provides a silicon nitride sintered body comprising a silicon nitride crystalline particle and a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 &#x3bc;m&#xd7;100 &#x3bc;m unit area of 15 to 35% when an arbitrary cross section thereof is photographed. Further, it is preferable that the area ratio of the grain boundary phase per 100 &#x3bc;m&#xd7;100 &#x3bc;m unit area is 15 to 25%. Furthermore, the silicon nitride sintered body is suitable for a wear resistant member. Due to above structure, there can be provided a silicon nitride sintered body and a wear resistant member having a high processability (workability) and an excellent sliding property.

Silicon nitride sintered body and wear resistant member using the same

The present invention provides a fuel gasification furnace including a gasification chamber () for fluidizing a high-temperature fluidizing medium therein to form a gasification chamber fluidized bed having an interface, and for gasifying a fuel in the gasification chamber fluidized bed, a char combustion chamber () for fluidizing a high-temperature fluidizing medium therein to form a char combustion chamber fluidized bed having an interface, and for combusting char generated by gasification in the gasification chamber () in the char combustion chamber fluidized bed to heat the fluidizing medium, and a first energy recovery device () for using gases generated by the gasification chamber () as a fuel. The gasification chamber () and the char combustion chamber () are integrated with each other. The gasification chamber () and the char combustion chamber () are divided from each other by a first partition wall () for preventing gases from flowing therebetween, and which extends vertically upward from the interfaces of the respective fluidized beds. The first partition wall () has a first opening () provided in a lower portion thereof, and the first opening () serves as a communication between the gasification chamber () and the char combustion chamber (), for allowing the fluidizing medium heated in the char combustion chamber () to move from the char combustion chamber () via the first opening () into the gasification chamber ().

Fuel gasification system

A display unit has a face surface and a multi-layered antireflection antistatic film composed of three layers or more which are formed on the face surface. The multi-layered antireflection antistatic film has an absorption layer, a conductive layer, and a protect layer in the order from a face surface side. The absorption layer includes at least one kind of organic coloring matter, SiO , and a silane coupling agent, and the silane coupling agent content thereof is seven times or less by weight the total solid content of SiO and the organic coloring matter.

Display unit having antireflection antistatic film and manufacturing method thereof

A cathode ray tube has, on an external surface of a face-panel, an anti-reflection film in which a layer mainly consisting of SiO is laminated on a transparent conductive layer that includes at least one of colored ITO and colored ATO, and a coloring matter that has a color that is a complementary color with respect to the colors of ITO and/or ATO. As the colored ITO and/or colored ATO, one that has a particle diameter of from 10 to 500 nm is employed. In addition, as the coloring matter, a dyestuff that has the maximum absorption in the wavelength range of 550 to 600 nm or the like is employed. Value of surface resistance of the anti-reflection film is preferable to be 1&times;10 &OHgr;/sq or less. A cathode ray tube having such an anti-reflection film can prevent effectively AEF from occurring and realize an improved contrast and comfortable body color.

Cathode-ray tube and method for manufacturing the same

Growing community of inventors

Yokohama, Japan

Katsuyuki Aoki