The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Jan. 19, 2016
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Materials Co., Ltd., Yokohama-Shi, Kanagawa-Ken, JP;

Inventor:

Katsuyuki Aoki, Kanagawa, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 27/02 (2006.01); C04B 35/584 (2006.01); H01L 23/12 (2006.01); H01L 23/13 (2006.01); H01L 23/36 (2006.01); H05K 1/03 (2006.01); H05K 1/05 (2006.01); H01L 23/15 (2006.01); H01L 23/373 (2006.01); C04B 37/02 (2006.01);
U.S. Cl.
CPC ...
C04B 35/584 (2013.01); C04B 37/026 (2013.01); H01L 23/12 (2013.01); H01L 23/13 (2013.01); H01L 23/15 (2013.01); H01L 23/36 (2013.01); H01L 23/3735 (2013.01); H05K 1/03 (2013.01); H05K 1/05 (2013.01); C04B 2235/3205 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3248 (2013.01); C04B 2235/3249 (2013.01); C04B 2235/3878 (2013.01); C04B 2235/3895 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/767 (2013.01); C04B 2235/77 (2013.01); C04B 2235/786 (2013.01); C04B 2235/80 (2013.01); C04B 2235/85 (2013.01); C04B 2235/96 (2013.01); C04B 2235/963 (2013.01); C04B 2235/9607 (2013.01); C04B 2237/125 (2013.01); C04B 2237/127 (2013.01); C04B 2237/368 (2013.01); C04B 2237/407 (2013.01); C04B 2237/704 (2013.01); C04B 2237/706 (2013.01); C04B 2237/86 (2013.01);
Abstract

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I, I, I, and I, a peak ratio (I)/(I+I) satisfies a range of 0.01 to 0.08, and a peak ratio (I)/(I+I) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m·K or more, and excellence in insulating properties and strength.


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