The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Apr. 21, 2021
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Materials Co., Ltd., Yokohama, JP;

Inventors:

Kai Funaki, Yokohama Kanagawa, JP;

Katsuyuki Aoki, Yokohama Kanagawa, JP;

Haruhiko Yamaguti, Yokohama Kanagawa, JP;

Minoru Takao, Yokohama Kanagawa, JP;

Yutaka Abe, Zushi Kanagawa, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/587 (2006.01); C04B 35/593 (2006.01); C04B 35/626 (2006.01); C04B 35/63 (2006.01); C04B 35/645 (2006.01); F16C 19/02 (2006.01); F16C 33/32 (2006.01); H02K 5/173 (2006.01); H02K 7/08 (2006.01); H02K 11/33 (2016.01);
U.S. Cl.
CPC ...
C04B 35/587 (2013.01); C04B 35/593 (2013.01); C04B 35/6261 (2013.01); C04B 35/63 (2013.01); C04B 35/6455 (2013.01); F16C 19/02 (2013.01); F16C 33/32 (2013.01); H02K 5/1732 (2013.01); H02K 7/083 (2013.01); H02K 11/33 (2016.01); C04B 2235/3217 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3839 (2013.01); C04B 2235/3865 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/661 (2013.01); C04B 2235/782 (2013.01); C04B 2235/786 (2013.01); C04B 2235/85 (2013.01); F16C 2206/60 (2013.01);
Abstract

The sliding member according to the embodiment includes a silicon nitride sintered body that includes silicon nitride crystal grains and a grain boundary phase, in which a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 10%. The percentage is more preferably not less than 0% and not more than 3%.


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