The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Oct. 21, 2013
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Materials Co., Ltd., Yokohama-shi, Kanagawa-ken, JP;

Inventors:

Kai Funaki, Yokohama, JP;

Michiyasu Komatsu, Yokohama, JP;

Haruhiko Yamaguti, Yokohama, JP;

Katsuyuki Aoki, Yokohama, JP;

Assignees:

KABUSHIKI KAISHA TOSHIBA, Minato-Ku, JP;

TOSHIBA MATERIALS CO., LTD., Yokohama-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/587 (2006.01); F16C 33/32 (2006.01); F16C 33/62 (2006.01); F16C 33/14 (2006.01); C04B 35/593 (2006.01);
U.S. Cl.
CPC ...
C04B 35/587 (2013.01); C04B 35/593 (2013.01); C04B 35/5935 (2013.01); F16C 33/145 (2013.01); F16C 33/32 (2013.01); F16C 33/62 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3239 (2013.01); C04B 2235/3241 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3256 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3839 (2013.01); C04B 2235/3865 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/767 (2013.01); C04B 2235/78 (2013.01); C04B 2235/786 (2013.01); C04B 2235/788 (2013.01); C04B 2235/85 (2013.01); C04B 2235/96 (2013.01); C04B 2235/963 (2013.01);
Abstract

The present invention provides a silicon nitride sintered body comprising a silicon nitride crystalline particle and a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 μm×100 μm unit area of 15 to 35% when an arbitrary cross section thereof is photographed. Further, it is preferable that the area ratio of the grain boundary phase per 100 μm×100 μm unit area is 15 to 25%. Furthermore, the silicon nitride sintered body is suitable for a wear resistant member. Due to above structure, there can be provided a silicon nitride sintered body and a wear resistant member having a high processability (workability) and an excellent sliding property.


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