Hopewell Junction, NY, United States of America

Kai D Feng

USPTO Granted Patents = 119 

Average Co-Inventor Count = 2.6

ph-index = 12

Forward Citations = 753(Granted Patents)

DiyaCoin DiyaCoin 0.65 


Inventors with similar research interests:


Location History:

  • Hopewell Jct., NY (US) (2010)
  • Hopewell Juction, NY (US) (2010)
  • Hopewell Jct, VT (US) (2011)
  • Hopewell Junction, VT (US) (2012)
  • Essex Junction, VT (US) (2002 - 2013)
  • Hopewell Junction, NY (US) (2008 - 2018)

Company Filing History:


Years Active: 2002-2018

where 'Filed Patents' based on already Granted Patents

119 patents (USPTO):

Title: Innovations by Kai D Feng: A Leader in Semiconductor Patents

Introduction

Kai D Feng is an accomplished inventor based in Hopewell Junction, NY, with an impressive portfolio of 119 patents. His innovations primarily focus on semiconductor technologies, contributing significantly to advancements in on-chip randomness generation and field-effect transistor structures. Through his pioneering work, he has made substantial impacts in the tech industry.

Latest Patents

Among his latest patents is an innovative on-chip randomness generation technology. This invention features an embedded true noise generator that includes low-voltage, high-noise zener diodes and an in-situ closed-loop zener diode power control circuit. The use of heavily doped polysilicon and silicon p-n diode structures aims to minimize breakdown voltage, enhance noise levels, and improve reliability. Furthermore, the invention incorporates measures to safeguard zener diodes from catastrophic burn-out through an effective control circuit.

Another noteworthy patent focuses on commonly-bodied field-effect transistors. This invention details a structure defined by a trench isolation region within a semiconductor substrate. The configuration comprises multiple sections, with a design that efficiently connects first sections through second sections to a third section, which serves as a common-body contact. This innovative design ensures a range of heights across sections, optimizing functionality in field-effect transistor applications.

Career Highlights

Kai D Feng has held key positions at prominent companies, including IBM and GlobalFoundries Inc. His work at these industry leaders reflects his dedication to advancing semiconductor technology and innovation. Throughout his career, his patents have positioned him as a valued contributor to the tech landscape.

Collaborations

Feng has collaborated with notable individuals in his field, including Hanyi Ding and Ping-Chuan Wang. These partnerships illustrate the collaborative spirit that often drives significant advancements in technology, showcasing how teamwork can foster creativity and innovation.

Conclusion

Kai D Feng continues to be a significant figure in the realm of semiconductor innovations. With a robust patent portfolio and collaborations that enhance his research, he exemplifies the innovative spirit that propels technology forward. His contributions not only improve semiconductor applications but also inspire future inventors to push the boundaries of what's possible.

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