The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2015

Filed:

Feb. 17, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kai D. Feng, Hopewell Junction, NY (US);

Wai-Kin Li, Beacon, NY (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Zhijian Yang, Stormville, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/544 (2006.01); H01L 21/3105 (2006.01); H01L 23/522 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/31058 (2013.01); H01L 22/34 (2013.01); H01L 23/522 (2013.01); H01L 23/5221 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 23/5386 (2013.01); H01L 2223/54433 (2013.01); H01L 2224/05097 (2013.01);
Abstract

An organic material layer is lithographically patterned to include a linear array portion of lines and spaces. In one embodiment, the organic material layer can be an organic planarization layer that is patterned employing a photoresist layer, which is consumed during patterning of the organic planarization layer. Volume expansion of the organic planarization layer upon exposure to a halogen-including gas causes portions of the linear array to collapse at random locations. In another embodiment, the height of the photoresist layer is selected such that the linear array portion of the photoresist layer is mechanically unstable and produces random photoresist collapses. The pattern including random modifications due to the collapse of the organic material layer is transferred into an underlying layer to generate an array of conductive material lines with random electrical disruption of shorts or opens. The structure with random shorts can be employed as a physical unclonable function.


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