The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Apr. 27, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Chengwen Pei, Danbury, CT (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Kai D. Feng, Hopewell Junction, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/3065 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 21/28017 (2013.01); H01L 21/3065 (2013.01); H01L 27/1203 (2013.01);
Abstract

Structures for a commonly-bodied field-effect transistors and methods of forming such structures. The structure includes a body of semiconductor material defined by a trench isolation region in a semiconductor substrate. The body includes a plurality of first sections, a plurality of second sections, and a third section, the second sections coupling the first sections and the third section. The third section includes a contact region used as a common-body contact for at least the first sections. The first sections and the third section have a first height and the second sections have a second height that is less than the first height.


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