IDiyas

For the Inventor, By the Inventor

Singapore, Singapore

Junqi Wei

USPTO Granted Patents = 16 

Average Co-Inventor Count = 6.4

ph-index = 3

Forward Citations = 104(Granted Patents)


Location History:

  • Xi'an Hi-Tech Zone, CN (2018)
  • Xi'an, CN (2018)
  • Singapore, SG (2021 - 2024)

Company Filing History:

goldMedal16 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 2018-2024

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16 patents (USPTO):
1. 12148629 - Shutter disk (2024-11-19),
2. 12100577 - High conductance inner shield for process chamber (2024-09-24),
3. 12080522 - Preclean chamber upper shield with showerhead (2024-09-03),
4. 11913107 - Methods and apparatus for processing a substrate (2024-02-27),
5. 11881385 - Methods and apparatus for reducing defects in preclean chambers (2024-01-23),
6. 11862480 - Shutter disk (2024-01-02),
7. 11670513 - Apparatus and systems for substrate processing for lowering contact resistance (2023-06-06),
8. D973609 - Upper shield with showerhead for a process chamber (2022-12-27),
9. D971167 - Lower shield for a substrate processing chamber (2022-11-29),
10. 11328929 - Methods, apparatuses and systems for substrate processing for lowering contact resistance (2022-05-10),
11. 11171017 - Shutter disk (2021-11-09),
12. D931241 - Lower shield for a substrate processing chamber (2021-09-21),
13. 11114288 - Physical vapor deposition apparatus (2021-09-07),
14. D913979 - Inner shield for a substrate processing chamber (2021-03-23),
15. 10115573 - Apparatus for high compressive stress film deposition to improve kit life (2018-10-30),

Title: Innovations of Junqi Wei: A Pioneer in Advanced Materials

Introduction

Junqi Wei is a prominent inventor based in Singapore, known for his significant contributions to the field of advanced materials. With a remarkable portfolio of 16 patents, he has made strides in developing innovative solutions that enhance manufacturing processes in various industries.

Latest Patents

Among his latest patents, Wei has developed a shutter disk that comprises one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD). This invention allows for pasting to minimize outgassing and control defects during the etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including oxygen, carbon monoxide, and water. Another notable patent is the high conductance inner shield for process chambers. This invention includes a tubular body with a central opening designed to surround a substrate support, ensuring that the sidewalls do not include any through holes. The top plate of the process kit is coupled to the upper end of the tubular body and substantially covers the central opening, featuring a gas inlet and a diameter greater than that of the tubular body.

Career Highlights

Junqi Wei is currently employed at Applied Materials, Inc., a leading company in the field of materials engineering. His work focuses on developing advanced technologies that improve manufacturing efficiency and product quality.

Collaborations

Throughout his career, Wei has collaborated with notable colleagues, including Yueh Sheng Ow and Ananthkrishna Jupudi. These collaborations have further enriched his innovative contributions to the field.

Conclusion

Junqi Wei's work exemplifies the spirit of innovation in advanced materials, showcasing his commitment to enhancing manufacturing processes through his patents. His contributions continue to influence the industry and inspire future advancements.

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