The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Apr. 11, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yueh Sheng Ow, Singapore, SG;

Junqi Wei, Singapore, SG;

Wen Long Favier Shoo, Singapore, SG;

Ananthkrishna Jupudi, Singapore, SG;

Takashi Shimizu, Chiba-Prefecture, JP;

Kelvin Boh, Singapore, SG;

Tuck Foong Koh, Singapore, SG;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/30 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); H01L 21/67017 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/6831 (2013.01);
Abstract

Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.


Find Patent Forward Citations

Loading…