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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Jungdal Choi

USPTO Granted Patents = 34 

Average Co-Inventor Count = 3.4

ph-index = 9

Forward Citations = 180(Granted Patents)


Location History:

  • Suwon Si, KR (2013)
  • Gyeonggi-do, KR (2010 - 2015)
  • Seoul, KR (2011 - 2017)
  • Hwaseong-si, KR (2013 - 2017)

Company Filing History:

goldMedal34 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2010-2017

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34 patents (USPTO):
1. 9564237 - Nonvolatile memory device and read method thereof (2017-02-07),
2. 9559112 - Semiconductor devices and methods of fabricating the same (2017-01-31),
3. 9514807 - Variable resistance memory device (2016-12-06),
4. 9502531 - Semiconductor device having fin-type field effect transistor and method of manufacturing the same (2016-11-22),
5. 9466704 - Nonvolatile memory device and method of manufacturing the same (2016-10-11),
6. 9401209 - Three-dimensional semiconductor memory device (2016-07-26),
7. 9379244 - Semiconductor device having fin-type field effect transistor and method of manufacturing the same (2016-06-28),
8. 9224493 - Nonvolatile memory device and read method thereof (2015-12-29),
9. 9111617 - Three-dimensional semiconductor memory device (2015-08-18),
10. 9059395 - Resistive random access memory devices having variable resistance layers and related methods (2015-06-16),
11. 9036398 - Vertical resistance memory device and a read method thereof (2015-05-19),
12. 8953382 - Vertical nonvolatile memory devices and methods of operating same (2015-02-10),
13. 8923058 - Nonvolatile memory device (2014-12-30),
14. 8873294 - Nonvolatile memory devices, erasing methods thereof and memory systems including the same (2014-10-28),
15. 8822971 - Semiconductor memory device having three-dimensionally arranged resistive memory cells (2014-09-02),

Title: The Innovative Contributions of Jungdal Choi

Introduction

Jungdal Choi, located in Hwaseong-si, South Korea, is a prominent inventor known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 34 patents, Choi has continually pushed the boundaries of innovation, particularly in nonvolatile memory devices.

Latest Patents

Choi's most recent patents include groundbreaking technologies such as a nonvolatile memory device and methods for interfacing with memory cells. One such patent describes a nonvolatile memory device that enhances reliability by compensating the threshold voltage of a flash memory cell. This innovative architecture features a memory cell array and a voltage generator designed to supply different read voltages during both read and program operations, ensuring optimal performance and reliability.

Another significant patent outlines a method for fabricating semiconductor memory devices, involving the creation of a mold stack with alternating sacrificial layers. This process includes the formation of vertical channels that penetrate the mold stack, leading to effective data storage layer development. The intricate design of gates and insulation layers demonstrates Choi's advanced understanding of semiconductor fabrication techniques.

Career Highlights

Choi has had an illustrious career, having worked with leading technology firms, notably Samsung Electronics Co., Ltd. His experience in high-caliber organizations has significantly influenced his innovative output, allowing him to develop numerous patented technologies that enhance semiconductor performance.

Collaborations

Throughout his career, Choi has collaborated with talented engineers and professionals, including Changhyun Lee and Kwang Soo Seol. These collaborations have fostered a dynamic exchange of ideas that has undoubtedly contributed to the successful development of his patented technologies.

Conclusion

Jungdal Choi’s inventive spirit and dedication to advancing semiconductor technology make him a notable figure in the field. His 34 patents reflect not only his skill and expertise but also his commitment to innovation. As technology continues to evolve, Choi’s contributions will undoubtedly play a critical role in shaping the future of nonvolatile memory devices and semiconductor manufacturing processes.

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