The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Dec. 01, 2015
Applicants:

Younseon Kang, Yongin-si, KR;

Jungdal Choi, Hwaseong-si, KR;

Masayuki Terai, Suwon-si, KR;

Youngbae Kim, Seoul, KR;

Jung Moo Lee, Hwaseong, KR;

Seungjae Jung, Suwon-si, KR;

Inventors:

YounSeon Kang, Yongin-si, KR;

Jungdal Choi, Hwaseong-si, KR;

Masayuki Terai, Suwon-si, KR;

Youngbae Kim, Seoul, KR;

Jung Moo Lee, Hwaseong, KR;

Seungjae Jung, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 8/00 (2006.01); G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 7/00 (2013.01); G11C 8/00 (2013.01); G11C 11/16 (2013.01);
Abstract

A variable resistance memory device includes upper interconnections on a substrate, first and second word lines provided between the substrate and the upper interconnections and vertically spaced apart from each other, a first bit line disposed between the first and second word lines and intersecting the first and second word lines, memory cells provided in an intersecting region of the first word line and the first bit line and an intersecting region of the second word line and the first bit line, a first word line contact directly connecting the first word line to a corresponding one of the upper interconnections, and a second word line contact directly connecting the second word line to a corresponding one of the upper interconnections.


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