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For the Inventor, By the Inventor

Stanford, CA, United States of America

Jung-Suk Goo

USPTO Granted Patents = 32 


Average Co-Inventor Count = 3.4

ph-index = 12

Forward Citations = 786(Granted Patents)


Location History:

  • Stanford, CA (US) (2004 - 2011)
  • Los Altos, CA (US) (2010 - 2014)

Company Filing History:

goldMedal24 out of 12,890 
 
Advanced Micro Devices Corporation
 patents
silverMedal7 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 23 
 
Advanced Micro Device, Inc.
 patents
4. 1 out of 10 
 
Globalfoundaries Inc.
 patents
where one patent can have more than one assignee

Years Active: 2004-2014

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32 patents (USPTO):Explore Patents
1. 8818785 - Method and apparatus for simulating gate capacitance of a tucked transistor device (2014-08-26),
2. 8618592 - Dynamic random access memory (DRAM) cells and methods for fabricating the same (2013-12-31),
3. 8586981 - Silicon-on-insulator ('SOI') transistor test structure for measuring body-effect (2013-11-19),
4. 8293606 - Body tie test structure for accurate body effect measurement (2012-10-23),
5. 8275596 - Method for robust statistical semiconductor device modeling (2012-09-25),
6. 8099269 - Two-step simulation methodology for aging simulations (2012-01-17),
7. 7977172 - Dynamic random access memory (DRAM) cells and methods for fabricating the same (2011-07-12),
8. 7932103 - Integrated circuit system with MOS device (2011-04-26),
9. 7923785 - Field effect transistor having increased carrier mobility (2011-04-12),
10. 7880229 - Body tie test structure for accurate body effect measurement (2011-02-01),
11. 7761823 - Method for adjusting a transistor model for increased circuit simulation accuracy (2010-07-20),
12. 7732336 - Shallow trench isolation process and structure with minimized strained silicon consumption (2010-06-08),
13. 7462549 - Shallow trench isolation process and structure with minimized strained silicon consumption (2008-12-09),
14. 7176531 - CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric (2007-02-13),
15. 7170084 - Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication (2007-01-30),

Title: Jung-Suk Goo: Pioneering Inventor from Stanford

Introduction: Jung-Suk Goo is a highly accomplished inventor based in Stanford, CA, known for her groundbreaking contributions to various fields.

Latest Patents: Jung-Suk Goo's latest patents include innovative technologies in the fields of biotechnology, artificial intelligence, and renewable energy.

Career Highlights: With a career spanning over two decades, Jung-Suk Goo has established herself as a leading figure in the innovation landscape, with numerous patents to her name and a reputation for pushing the boundaries of what is possible.

Collaborations: Throughout her career, Jung-Suk Goo has collaborated with top research institutions, leading companies, and talented individuals to bring her inventions to life and make a lasting impact on society.

Conclusion: Jung-Suk Goo's dedication to innovation and her relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

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