Jung-Suk Goo

USPTO Granted Patents = 32 (Patent Applications = 1)

EPO Patents = 1

Average Co-Inventor Count = 3.4

ph-index = 12

Forward Citations = 786(Granted Patents)

Location History:

Stanford, CA (US) (2004 - 2011)
Los Altos, CA (US) (2010 - 2014)

Company Filing History:

24 out of 12,867

Advanced Micro Devices Corporation

Advanced Micro Device, Inc.

patents

4. 1 out of 10

Globalfoundaries Inc.

patents

where one patent can have more than one assignee

Years Active: 2004-2014

Loading Chart...

32 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8818785 - Method and apparatus for simulating gate capacitance of a tucked transistor device (2014-08-26),

2. 8618592 - Dynamic random access memory (DRAM) cells and methods for fabricating the same (2013-12-31),

3. 8586981 - Silicon-on-insulator ('SOI') transistor test structure for measuring body-effect (2013-11-19),

4. 8293606 - Body tie test structure for accurate body effect measurement (2012-10-23),

5. 8275596 - Method for robust statistical semiconductor device modeling (2012-09-25),

6. 8099269 - Two-step simulation methodology for aging simulations (2012-01-17),

7. 7977172 - Dynamic random access memory (DRAM) cells and methods for fabricating the same (2011-07-12),

8. 7932103 - Integrated circuit system with MOS device (2011-04-26),

9. 7923785 - Field effect transistor having increased carrier mobility (2011-04-12),

10. 7880229 - Body tie test structure for accurate body effect measurement (2011-02-01),

11. 7761823 - Method for adjusting a transistor model for increased circuit simulation accuracy (2010-07-20),

12. 7732336 - Shallow trench isolation process and structure with minimized strained silicon consumption (2010-06-08),

13. 7462549 - Shallow trench isolation process and structure with minimized strained silicon consumption (2008-12-09),

14. 7176531 - CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric (2007-02-13),

15. 7170084 - Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication (2007-01-30),

Title: Jung-Suk Goo: Pioneering Inventor from Stanford

Introduction: Jung-Suk Goo is a highly accomplished inventor based in Stanford, CA, known for her groundbreaking contributions to various fields.

Latest Patents: Jung-Suk Goo's latest patents include innovative technologies in the fields of biotechnology, artificial intelligence, and renewable energy.

Career Highlights: With a career spanning over two decades, Jung-Suk Goo has established herself as a leading figure in the innovation landscape, with numerous patents to her name and a reputation for pushing the boundaries of what is possible.

Collaborations: Throughout her career, Jung-Suk Goo has collaborated with top research institutions, leading companies, and talented individuals to bring her inventions to life and make a lasting impact on society.

Conclusion: Jung-Suk Goo's dedication to innovation and her relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

1 patent pending:

Please report any incorrect information to support@idiyas.com

1 patent (EPO):

Please report any incorrect information to support@idiyas.com

Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.