The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Apr. 29, 2011
Applicants:
Hyun-jin Cho, Palo Alto, CA (US);
Sang H. Dhong, San Jose, CA (US);
Jung-suk Goo, Los Altos, CA (US);
Gurupada Mandal, San Jose, CA (US);
Inventors:
Hyun-Jin Cho, Palo Alto, CA (US);
Sang H. Dhong, San Jose, CA (US);
Jung-Suk Goo, Los Altos, CA (US);
Gurupada Mandal, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor memory cell is provided that includes a trench capacitor and an access transistor. The access transistor comprises a source region, a drain region, a gate structure overlying the trench capacitor, and an active body region that couples the drain region to the source region. The active body region directly contacts the trench capacitor.