The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Dec. 08, 2008
Hyun-jin Cho, Palo Alto, CA (US);
Sang H. Dhong, San Jose, CA (US);
Jung-suk Goo, Los Altos, CA (US);
Gurupada Mandal, San Jose, CA (US);
Hyun-Jin Cho, Palo Alto, CA (US);
Sang H. Dhong, San Jose, CA (US);
Jung-Suk Goo, Los Altos, CA (US);
Gurupada Mandal, San Jose, CA (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench. Conductivity determining impurities are implanted into the semiconductor structure to create a well region in the semiconductor layer that is directly coupled to the trench capacitor. A gate structure is formed overlying a portion of the well region. Conductivity determining ions are then implanted into other portions of the well region to form a source region and a drain region, and to define an active body region between the source region and the drain region. The active body region directly contacts the trench capacitor.