Nisshin, Japan

Jun Okawara

USPTO Granted Patents = 12 

 

Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Miyoshi, JP (2016)
  • Toyota, JP (2016)
  • Nisshin, JP (2015 - 2020)
  • Nagakute, JP (2021)
  • Kariya, JP (2022)

Company Filing History:


Years Active: 2015-2022

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12 patents (USPTO):Explore Patents

Title: Jun Okawara - Innovator in Semiconductor Technology

Introduction

Jun Okawara is an inventor based in Nisshin-shi, Japan. He is known for his contributions to semiconductor technology, particularly in the development of vertical-type semiconductor devices. Although he currently holds no granted patents, his innovative ideas are reflected in his patent applications.

Latest Patent Applications

One of Jun Okawara's notable patent applications is for a vertical-type semiconductor device. This application describes a buffer layer that includes an n-type first buffer region and an n-type second buffer region. The first buffer region is positioned at a first depth from a main surface of a semiconductor layer and has a higher impurity concentration than that of the drift layer. The second buffer region is located at a shallower second depth from the main surface and also has a higher impurity concentration than the drift layer. The first buffer region defines an opening in the plane of the semiconductor layer at the first depth, while the second buffer region defines an opening at the second depth.

Conclusion

Jun Okawara's work in semiconductor technology showcases his innovative approach to device design. His patent application reflects a significant understanding of semiconductor structures and their functionalities. As he continues to develop his ideas, he may contribute further to the field in the future.

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