The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Jun. 08, 2015
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Satoru Kameyama, Toyota, JP;

Tadashi Misumi, Nisshin, JP;

Jun Okawara, Nisshin, JP;

Shinya Iwasaki, Toyota, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/07 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 21/8249 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0716 (2013.01); H01L 21/8249 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/0696 (2013.01); H01L 29/417 (2013.01); H01L 29/41708 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01);
Abstract

A semiconductor device includes: a plurality of trenches provided in an upper surface of a semiconductor substrate; trench electrodes each provided in a corresponding one of the trenches; a first semiconductor layer of a first conductivity type provided in a first range interposed between adjacent ones of the trenches; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; an interlayer insulation film provided on the upper surface of the semiconductor substrate and including a plurality of contact holes; a first conductor layer provided in each of the contact holes; and a surface electrode provided on the interlayer insulation film and connected to each of the first conductor layers.


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