The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Mar. 04, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Abstract
A semiconductor device includes a diode region and an IGBT region. The diode region includes a front side anode region, an n-type diode barrier region, an n-type diode pillar region reaching the diode barrier region through the front side anode region, and a p-type back side anode region separated from the front side anode region by the diode barrier region. The IGBT region includes a front side body region, an n-type IGBT barrier region, and a back side body region separated from the front side body region by the IGBT barrier region. When a gate-off voltage is applied to a gate electrode, a resistance between the IGBT barrier region and the emitter electrode is higher than a resistance between the diode barrier region and the anode electrode.