The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Mar. 06, 2015
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute-shi, Aichi-ken, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Satoru Machida, Nagakute, JP;
Yusuke Yamashita, Nagakute, JP;
Koichi Nishikawa, Nagakute, JP;
Masaru Senoo, Okazaki, JP;
Jun Okawara, Nisshin, JP;
Yoshifumi Yasuda, Nisshin, JP;
Hiroshi Hosokawa, Toyota, JP;
Yasuhiro Hirabayashi, Toyota, JP;
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor device is provided with a silicon layer, an upper surface side aluminum layer containing silicon and an insulation film. The upper surface side aluminum layer contacts and is layered on a part of a surface of the silicon layer. The insulation film contacts and is layered on another part of the surface of the silicon layer. The insulation film is adjacent to and contacts the upper surface side aluminum layer. The insulation film includes an insulation film body and a plurality of first nodule segregated portions projecting from the insulation film body toward the upper surface side aluminum layer as seen along a vertical direction relative to the surface of the silicon layer. A corner is formed by a side surface of the insulation film body and a side surface of each of the first nodule segregated portions as seen along the vertical direction.