The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Mar. 10, 2021
Applicant:
Denso Corporation, Kariya, JP;
Inventors:
Tomoki Akai, Kariya, JP;
Yuma Kagata, Kariya, JP;
Masaru Senoo, Kariya, JP;
Jun Okawara, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor device having IGBT, FWD and separate cell regions in a common semiconductor substrate, includes: a drift layer; a base layer; trench gate structures; an emitter region; a collector layer; a cathode layer; a first electrode; and a second electrode. The IGBT region having a first gate electrode in first and second IGBT trenches with a grid pattern is on the collector layer, and the FWD region with a second gate electrode in first and second FWD trenches with a grid pattern is on the cathode layer.