The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Apr. 02, 2013
Jun Okawara, Miyoshi, JP;
Jun Okawara, Miyoshi, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
An IGBT includes a trench gate electrode that is bent when a semiconductor substrate is seen in a plan view, and an inner semiconductor region of the same conductivity type as an emitter region is formed at a position inside a bent portion of the trench gate electrode and exposed on a front surface of the semiconductor substrate. The trench gate electrode is bent, and therefore, a hole density during operation increases, whereby conductivity modulation phenomenon is accelerated, and an on-state voltage is reduced. When the IGBT is turned off, the inner semiconductor region influences a movement path of the holes so that a moving distance thereof through a body region becomes short. The holes escape easily to a body contact region when the IGBT is turned off. Increase of current density during the operation and prevention of a latchup are both achieved.