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For the Inventor, By the Inventor

Scarborough, ME, United States of America

Jun Cai

USPTO Granted Patents = 59 

Average Co-Inventor Count = 1.6

ph-index = 10

Forward Citations = 452(Granted Patents)

Forward Citations (Not Self Cited) = 431(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Portland, ME (US) (2004 - 2007)
  • Scarborough, MA (US) (2018)
  • Scarborough, ME (US) (2005 - 2020)
  • Shugart, SG (2020)
  • Singapore, SG (2001 - 2023)

Company Filing History:

goldMedal33 out of 1,302 
 
Fairchild Semiconductor Corporation
 patents
silverMedal7 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
bronzeMedal6 out of 9 
 
Nano Silicon Pte. Ltd.
 patents
4. 6 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
5. 5 out of 8,679 
 
Seagate Technology Incorporated
 patents
6. 2 out of 79 
 
Institute of Microelectronics
 patents

Years Active: 2001-2023

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Areas of Expertise:
Onboard Machine Learning
Multi-Actuator Storage Device
Lateral DMOS Device
Localized Carrier Lifetime Reduction
High-Voltage Diodes
Hybrid-Mode LDMOS
Integrated Circuit Structure
Electrostatic Discharge Protection
Low Leakage Diode
Analog CMOS Unit
Error Detection Codes
Short Channel CMOS Devices
59 patents (USPTO):Explore Patents
1. 11592984 - Onboard machine learning for storage device (2023-02-28),
2. 11295778 - Resource allocation for multi-actuator storage device (2022-04-05),
3. 10755742 - Fragmented data storage bands (2020-08-25),
4. 10727334 - Lateral DMOS device with dummy gate (2020-07-28),
5. 10453955 - Lateral DMOS device with dummy gate (2019-10-22),
6. 10381259 - Semiconductor device with localized carrier lifetime reduction and fabrication method thereof (2019-08-13),
7. 10073735 - Seeding mechanism for error detection codes (2018-09-11),
8. 9871133 - Lateral DMOS device with dummy gate (2018-01-16),
9. 9698044 - Localized carrier lifetime reduction (2017-07-04),
10. 9678864 - Data reallocation upon detection of errors (2017-06-13),
11. 9450056 - Lateral DMOS device with dummy gate (2016-09-20),
12. 8912598 - Stepped-source LDMOS architecture (2014-12-16),
13. 8823051 - High-voltage diodes formed in advanced power integrated circuit devices (2014-09-02),
14. 8362557 - Stepped-source LDMOS architecture (2013-01-29),
15. 8349717 - High voltage LDMOS (2013-01-08),

Title: The Innovative Journey of Jun Cai

Introduction: Jun Cai, a talented inventor based in Scarborough, ME, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Jun Cai holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his diverse range of expertise and forward-thinking approach.

Career Highlights: With a background in engineering and a passion for problem-solving, Jun Cai has led numerous successful projects that have revolutionized industries and improved the lives of many. His dedication to innovation is evident in the impact of his creations.

Collaborations: Jun Cai has collaborated with leading research institutions, universities, and tech companies to further his inventions and bring them to market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Jun Cai's innovative spirit, coupled with his technical acumen, has solidified his reputation as a pioneering inventor in Scarborough, ME, and beyond. His relentless pursuit of excellence continues to inspire future generations of inventors and innovators.

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