The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Jun. 05, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Alex Kalnitsky, San Francisco, CA (US);
Chih-Wen Yao, Hsinchu, TW;
Jun Cai, Scarborough, ME (US);
Ruey-Hsin Liu, Hsinchu, TW;
Hsiao-Chin Tuan, Judong County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor structure includes forming an isolation feature in a substrate, removing a portion of the isolation feature and a portion of the substrate underneath the removed portion of the isolation feature to form a trench in the substrate, and forming a trapping feature around a bottom portion of the trench. A first sidewall and a second sidewall of the trench are in direct contact with the isolation feature, and a bottom surface of the trench is below a bottom surface of the isolation feature.