The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Dec. 01, 2011
Applicants:
Alex Kalnitsky, San Francisco, CA (US);
Chih-wen Yao, Hsinchu, TW;
Jun Cai, Scarborough, ME (US);
Ruey-hsin Liu, Hsinchu, TW;
Hsiao-chin Tuan, Judong County, TW;
Inventors:
Alex Kalnitsky, San Francisco, CA (US);
Chih-Wen Yao, Hsinchu, TW;
Jun Cai, Scarborough, ME (US);
Ruey-Hsin Liu, Hsinchu, TW;
Hsiao-Chin Tuan, Judong County, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 27/092 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/26506 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01); H01L 27/0921 (2013.01); H01L 29/1087 (2013.01); H01L 21/26586 (2013.01); H01L 21/76216 (2013.01); H01L 21/82385 (2013.01); H01L 21/823456 (2013.01);
Abstract
A semiconductor structure includes a substrate, a first power device and a second power device in the substrate, at least one isolation feature between the first and second power device, and a trapping feature adjoining the at least one isolation feature in the substrate.