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For the Inventor, By the Inventor

Los Gatos, CA, United States of America

Judy H Huang

This inventor holds 52 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Technology (CPC class 4387). Top assignees: Applied Materials, Inc., Novellus Systems Incorporated, Intevac, Inc.. Active years: 1998-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Judy H Huang. Retrieved from https://idiyas.com/inventor/judy-h-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 52 

% Patents Active = 76.9

 

Average Co-Inventor Count = 3.3

ph-index = 26

Forward Citations = 5,299(Granted Patents)

Forward Citations (Not Self Cited) = 5,223(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Los Gates, CA (US) (2001)
  • Los Gatos, CA (US) (1998 - 2015)

Company Filing History:

goldMedal35 out of 14,482 
 
Applied Materials, Inc.
 patents
silverMedal15 out of 993 
 
Novellus Systems Incorporated
 patents
bronzeMedal2 out of 121 
 
Intevac, Inc.
 patents

Years Active: 1998-2015

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Areas of Expertise:
Semiconductor Device
Plasma Treatment
Low K Dielectrics
Gap Fill Processes
CVD Process
Solar Cell Deposition
Adhesion Enhancement
Etch Stop Layers
Silicon Carbide
Photolithographic Processing
Nanoparticle Dispersions
Copper Oxidation Reduction
52 patents (USPTO):Explore Patents
1. 9034143 - Inductive/capacitive hybrid plasma source and system with such chamber (2015-05-19),
2. 8809161 - Flowable film dielectric gap fill process (2014-08-19),
3. 8677929 - Method and apparatus for masking solar cell substrates for deposition (2014-03-25),
4. 8580697 - CVD flowable gap fill (2013-11-12),
5. 8481403 - Flowable film dielectric gap fill process (2013-07-09),
6. 8183150 - Semiconductor device having silicon carbide and conductive pathway interface (2012-05-22),
7. 7915139 - CVD flowable gap fill (2011-03-29),
8. 7888233 - Flowable film dielectric gap fill process (2011-02-15),
9. 7727906 - H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift (2010-06-01),
10. 7670945 - In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application (2010-03-02),
11. 7582555 - CVD flowable gap fill (2009-09-01),
12. 7524735 - Flowable film dielectric gap fill process (2009-04-28),
13. 7482245 - Stress profile modulation in STI gap fill (2009-01-27),
14. 7476621 - [object Object] (2009-01-13),
15. 7470611 - In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application (2008-12-30),

Title: Innovations of Judy H. Huang: A Pioneer in Plasma Processing Technologies

Introduction

Judy H. Huang is a prominent inventor based in Los Gatos, California, recognized for her remarkable contributions to the fields of plasma processing and dielectric materials. With an impressive portfolio of 52 patents, she has made significant advancements that continue to shape the industry.

Latest Patents

Among her latest inventions is the "Inductive/Capacitive Hybrid Plasma Source and System with Such Chamber," which features a sophisticated plasma processing chamber that employs both capacitive and inductive coupling of RF power. This technology incorporates a variable capacitor to regulate the power distribution between an inductive coil and a top electrode, enhancing precision in processing substrates. Furthermore, the substrate is securely held using DC power without RF bias, allowing for a seamless operation within a movable chuck system that optimally handles substrates throughout the processing stages.

Another notable patent is the "Flowable Film Dielectric Gap Fill Process," which outlines innovative methods for applying a solid dielectric material to fill gaps on substrates. This process is marked by its capability to create a flowable film that ensures a consistent and void-free fill, transforming into solid dielectric material after application. The method utilizes a dielectric precursor reacting with an oxidant, which enhances the efficiency of gap filling in various substrates.

Career Highlights

Judy's career includes significant tenures at leading technology firms, such as Applied Materials, Inc. and Novellus Systems Incorporated. Her work in these organizations has established her reputation as a leader in developing cutting-edge technologies that both improve and innovate processing techniques in the semiconductor industry.

Collaborations

Throughout her career, Judy H. Huang has collaborated with esteemed colleagues, including David Wingto Cheung and Chi-I Lang. These partnerships have enabled her to leverage collective expertise, fostering a collaborative environment conducive to impactful inventions and research.

Conclusion

Judy H. Huang's work exemplifies the dynamic intersection of science and technology. Her persistent dedication to innovation continues to influence the semiconductor processing landscape, as she develops solutions that enhance efficiency and effectiveness in substrate treatments. With 52 patents to her name, Judy H. Huang stands as a testament to the importance of inventive spirit in driving technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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