The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Mar. 01, 2006
Applicants:
Minh Anh Nguyen, San Jose, CA (US);
Chi-i Lang, Sunnyvale, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Judy H. Huang, Los Gatos, CA (US);
Inventors:
Minh Anh Nguyen, San Jose, CA (US);
Chi-I Lang, Sunnyvale, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Judy H. Huang, Los Gatos, CA (US);
Assignee:
Novellus Systems, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract
Plasma etch processes incorporating H/Noble gas etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen and one or more Noble gases as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.