Taoyuan, Taiwan

Joy Cheng

USPTO Granted Patents = 24 

Average Co-Inventor Count = 3.6

ph-index = 4

Forward Citations = 46(Granted Patents)


Location History:

  • Hsin-Chu, TW (2017 - 2019)
  • Taoyuan, TW (2017 - 2023)

Company Filing History:


Years Active: 2017-2025

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24 patents (USPTO):Explore Patents

Title: The Innovative Mind Behind Extreme Ultraviolet Lithography: Joy Cheng

Introduction: Joy Cheng, a prolific inventor based in Taoyuan, Taiwan, has made significant contributions to the field of lithography with a remarkable portfolio of 20 patents. Her latest patents focus on extreme ultraviolet (EUV) photolithography methods, showcasing her expertise in cutting-edge technologies.

Latest Patents:

1. "Extreme ultraviolet photolithography method with developer composition": This patent details a method for lithography patterning using a metal-containing chemical in the photoresist layer, along with a specialized developer composition to remove metal residuals.

2. "Metal-compound-removing solvent and method in lithography": Cheng's innovation involves a cleaning fluid with specific solubility parameters to remove metal-containing materials from the wafer after an EUV lithography process.

Career Highlights: Cheng has held pivotal roles in renowned companies such as Taiwan Semiconductor Manufacturing Company Limited (TSMC). Her innovative spirit and technical acumen have led to groundbreaking advancements in lithography technology, establishing her as a leading figure in the industry.

Collaborations: Throughout her career, Cheng has collaborated with esteemed professionals like Ching-Yu Chang and An-Ren Zi. These innovative partnerships have fostered creativity and promoted knowledge sharing within the field of semiconductor technology.

Conclusion: Joy Cheng's relentless pursuit of innovation and her remarkable contributions to lithography technology underscore her as a trailblazer in the industry. Her patents and collaborations serve as a testament to her expertise and commitment to pushing the boundaries of technological advancement.

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