Joy Cheng

This inventor holds 24 USPTO granted patents and 1 published patent application, primarily in EUV Lithography. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joy Cheng. Retrieved from https://idiyas.com/inventor/joy-cheng-e706m6wd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 (Patent Applications = 1)

% Patents Active = 87.5

Average Co-Inventor Count = 3.6

ph-index = 4

Forward Citations = 53(Granted Patents)

Location History:

Hsin-Chu, TW (2017 - 2019)
Taoyuan, TW (2017 - 2023)

Company Filing History:

24 out of 42,872

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2017-2025

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Areas of Expertise:

EUV Lithography

Photoresist Development

Semiconductor Fabrication

Humidity Control

Metal-Compound-Removing Solvent

Pattern Roughness Reduction

Integrated Circuit Manufacturing

FinFET Structures

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12360456 - EUV metallic resist performance enhancement via additives (2025-07-15),

2. 12253800 - EUV metallic resist performance enhancement via additives (2025-03-18),

3. 12210286 - Metal-compound-removing solvent and method in lithography (2025-01-28),

4. 12181798 - Extreme ultraviolet photolithography method with developer composition (2024-12-31),

5. 11822238 - Extreme ultraviolet photolithography method with developer composition (2023-11-21),

6. 11681226 - Metal-compound-removing solvent and method in lithography (2023-06-20),

7. 11307504 - Humidity control in EUV lithography (2022-04-19),

8. 11300878 - Photoresist developer and method of developing photoresist (2022-04-12),

9. 11137685 - Semiconductor method of protecting wafer from bevel contamination (2021-10-05),

10. 11054742 - EUV metallic resist performance enhancement via additives (2021-07-06),

11. 10872773 - Methods of reducing pattern roughness in semiconductor fabrication (2020-12-22),

12. 10866516 - Metal-compound-removing solvent and method in lithography (2020-12-15),

13. 10866511 - Extreme ultraviolet photolithography method with developer composition (2020-12-15),

14. 10796910 - Method for performing a photolithography process (2020-10-06),

15. 10741410 - Material composition and methods thereof (2020-08-11),

Title: The Innovative Mind Behind Extreme Ultraviolet Lithography: Joy Cheng

Introduction: Joy Cheng, a prolific inventor based in Taoyuan, Taiwan, has made significant contributions to the field of lithography with a remarkable portfolio of 20 patents. Her latest patents focus on extreme ultraviolet (EUV) photolithography methods, showcasing her expertise in cutting-edge technologies.

Latest Patents:

1. "Extreme ultraviolet photolithography method with developer composition": This patent details a method for lithography patterning using a metal-containing chemical in the photoresist layer, along with a specialized developer composition to remove metal residuals.

2. "Metal-compound-removing solvent and method in lithography": Cheng's innovation involves a cleaning fluid with specific solubility parameters to remove metal-containing materials from the wafer after an EUV lithography process.

Career Highlights: Cheng has held pivotal roles in renowned companies such as Taiwan Semiconductor Manufacturing Company Limited (TSMC). Her innovative spirit and technical acumen have led to groundbreaking advancements in lithography technology, establishing her as a leading figure in the industry.

Collaborations: Throughout her career, Cheng has collaborated with esteemed professionals like Ching-Yu Chang and An-Ren Zi. These innovative partnerships have fostered creativity and promoted knowledge sharing within the field of semiconductor technology.

Conclusion: Joy Cheng's relentless pursuit of innovation and her remarkable contributions to lithography technology underscore her as a trailblazer in the industry. Her patents and collaborations serve as a testament to her expertise and commitment to pushing the boundaries of technological advancement.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: