The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Jun. 16, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

An-Ren Zi, Hsinchu, TW;

Joy Cheng, Taoyuan, TW;

Ching-Yu Chang, Yilang County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/16 (2006.01); G03F 7/26 (2006.01); G03F 7/30 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/26 (2013.01); G03F 7/0043 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/3057 (2013.01); G03F 7/38 (2013.01); H01L 21/0206 (2013.01); H01L 21/0209 (2013.01); H01L 21/0274 (2013.01); G03F 7/40 (2013.01);
Abstract

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.


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