The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 22, 2020

Filed:

Dec. 23, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chien-Wei Wang, Hsinchu County, TW;

Joy Cheng, Taoyuan, TW;

Ching-Yu Chang, Yilang County, TW;

Chin-Hsiang Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/288 (2006.01); H01L 21/3213 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2885 (2013.01); H01L 21/302 (2013.01); H01L 21/32139 (2013.01);
Abstract

A method includes forming a metal-containing material layer over a substrate, patterning the metal-containing material layer, where the patterned material layer has an average roughness, and electrochemically treating the patterned metal-containing material layer to reduce the average roughness. The treatment may be implemented by exposing the patterned metal-containing material layer to an electrically conducting solution and applying a potential between the patterned material layer and a counter electrode exposed to the solution, such that the treating reduces the average roughness of the patterned material layer. The electrically conducting solution may include an ionic compound dissolved in water, alcohol, and/or a surfactant.


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