Taiwan Semiconductor Manufacturing Comp. Ltd.

Joy Cheng

Ching-Yu Chang

An-Ren Zi

Chin-Hsiang Lin

Chien-Wei Wang

Tsung-Han Ko

Ru-Gun Liu

Teng-Chun Tsai

Shih-Ming Chang

Tai-Chun Huang

Tsai-Sheng Gau

Chun-Kuang Chen

Ken-Hsien Hsieh

Wei-Liang Lin

Kuei-Shun Chen

Yen-Chun Huang

Ting-Ting Chen

Yu-Chung Su

Kuan-Hsin Lo

Chih-Jie Lee

Ling-Fu Nieh

Pin-Chuan Su

A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

EUV metallic resist performance enhancement via additives

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

Metal-compound-removing solvent and method in lithography

The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

Extreme ultraviolet photolithography method with developer composition

A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.

Humidity control in EUV lithography

A photoresist developer includes a solvent having Hansen solubility parameters of 15&#x3c;&#x3b4;&#x3c;25, 10&#x3c;&#x3b4;&#x3c;25, and 6&#x3c;&#x3b4;&#x3c;30; an acid having an acid dissociation constant, pKa, of &#x2212;15&#x3c;pKa&#x3c;4, or a base having a pKa of 40&#x3e;pKa&#x3e;9.5; and a chelate.

Photoresist developer and method of developing photoresist

The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.

Semiconductor method of protecting wafer from bevel contamination

A method includes forming a metal-containing material layer over a substrate, patterning the metal-containing material layer, where the patterned material layer has an average roughness, and electrochemically treating the patterned metal-containing material layer to reduce the average roughness. The treatment may be implemented by exposing the patterned metal-containing material layer to an electrically conducting solution and applying a potential between the patterned material layer and a counter electrode exposed to the solution, such that the treating reduces the average roughness of the patterned material layer. The electrically conducting solution may include an ionic compound dissolved in water, alcohol, and/or a surfactant.

Methods of reducing pattern roughness in semiconductor fabrication

A method for performing a photolithography process is provided. The method includes forming a layer over a substrate, and exposing a portion of the layer to form an exposed region. The method also includes performing a baking process on the layer, so that voids are formed in the exposed region of the layer. The method further includes filling the void with a post treatment coating material, and the post treatment coating material is over the exposed region of the layer.

Method for performing a photolithography process

Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a metal complex including a radical generator, an organic core, and an organic solvent. By way of example, the organic core includes at least one cross-linker site. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

Growing community of inventors

Taoyuan, Taiwan

Joy Cheng