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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11307504 B1

PDFFull Text
Date of Patent:
Apr. 19, 2022

Filed:

Jun. 18, 2020

Humidity control in euv lithography

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

An-Ren Zi, Hsinchu, TW;

Chin-Hsiang Lin, Hsinchu, TW;

Ching-Yu Chang, Yilang County, TW;

Joy Cheng, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Colin W Kreutzer

Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/06 (2006.01); G03F 7/16 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70866 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/063 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/3057 (2013.01); G03F 7/32 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01);
Abstract

A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.

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