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San Francisco, CA, United States of America

Jong-Won Sean Lee

This inventor holds 17 USPTO granted patents. Top assignees: Micron Technology Incorporated, Intel Corporation, Ovonyx Inc.. Active years: 2003-2019.

USPTO Granted Patents = 17

% Patents Active = 82.4

Average Co-Inventor Count = 2.4

ph-index = 8

Forward Citations = 547(Granted Patents)

Location History:

Santa Clara, CA (US) (2003 - 2004)
San Francisco, CA (US) (2009 - 2016)
Boise, ID (US) (2014 - 2019)

Company Filing History:

9 out of 39,102

Micron Technology Incorporated

Carlow Innovations LLC

patents

Years Active: 2003-2019

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17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10475853 - Replacement materials processes for forming cross point memory (2019-11-12),

2. 10050084 - Replacement materials processes for forming cross point memory (2018-08-14),

3. 9659997 - Replacement materials processes for forming cross point memory (2017-05-23),

4. 9412939 - Forming sublithographic heaters for phase change memories (2016-08-09),

5. 9306165 - Replacement materials processes for forming cross point memory (2016-04-05),

6. 9117503 - Memory array plane select and methods (2015-08-25),

7. 9029826 - Phase change memory including ovonic threshold switch with layered electrode and methods for forming the same (2015-05-12),

8. 8633463 - Depositing titanium silicon nitride films for forming phase change memories (2014-01-21),

9. 8530875 - Phase change memory including ovonic threshold switch with layered electrode and methods for forming same (2013-09-10),

10. 8501523 - Depositing titanium silicon nitride films for forming phase change memories (2013-08-06),

11. 8404514 - Fabricating current-confining structures in phase change memory switch cells (2013-03-26),

12. 8345472 - Three-terminal ovonic threshold switch as a current driver in a phase change memory (2013-01-01),

13. 8278641 - Fabricating current-confining structures in phase change memory switch cells (2012-10-02),

14. 7833824 - Multilevel phase change memory (2010-11-16),

15. 7488968 - Multilevel phase change memory (2009-02-10),

Title: Innovations of Jong-Won Sean Lee

Introduction

Jong-Won Sean Lee is a prominent inventor based in San Francisco, CA. He has made significant contributions to the field of memory technology, holding a total of 17 patents. His work focuses on advanced materials and processes that enhance the performance of memory cells.

Latest Patents

One of Jong-Won Sean Lee's latest patents involves replacement materials processes for forming cross point memory. This patent discloses methods of forming memory cells that comprise phase change and/or chalcogenide materials. In one aspect, the method includes providing a lower line stack that extends in a first direction, which consists of a sacrificial line over a lower conductive line. The process further includes forming a chalcogenide line that extends in the same direction by selectively removing the sacrificial material of the sacrificial line and replacing it with a chalcogenide material.

Career Highlights

Throughout his career, Jong-Won Sean Lee has worked with leading technology companies, including Micron Technology Incorporated and Intel Corporation. His expertise in memory technology has positioned him as a key player in the development of innovative solutions in this field.

Collaborations

Some of his notable coworkers include Gianpaolo Spadini and Derchang Kau. Their collaborative efforts have contributed to advancements in memory technology and have furthered the impact of Jong-Won Sean Lee's inventions.

Conclusion

Jong-Won Sean Lee's contributions to memory technology through his innovative patents and collaborations highlight his significant role in the industry. His work continues to influence the development of advanced memory solutions.

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