The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
May. 06, 2010
Kuo-wei Chang, Cupertino, CA (US);
Jinwook Lee, San Jose, CA (US);
Jong-won Lee, San Francisco, CA (US);
Elijah V. Karpov, Santa Clara, CA (US);
Kuo-Wei Chang, Cupertino, CA (US);
Jinwook Lee, San Jose, CA (US);
Jong-Won Lee, San Francisco, CA (US);
Elijah V. Karpov, Santa Clara, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Erosion of chalcogenides in phase change memories using ovonic threshold switch selectors can be reduced by controlling columnar morphology in electrodes used in the ovonic threshold switch. The columnar morphology may cause cracks to occur which allow etchants used to etch the ovonic threshold switch to sneak through the ovonic threshold switch and to attack chalcogenides, either in the switch or in the memory element. In one embodiment, the electrode may be split into two metal nitride layers separated by an intervening metal layer.