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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9659997 B1

PDFFull Text
Date of Patent:
May. 23, 2017

Filed:

Mar. 02, 2016

Replacement materials processes for forming cross point memory

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jong-Won Lee, Boise, ID (US);

Gianpaolo Spadini, Los Gatos, CA (US);

Stephen W. Russell, Boise, ID (US);

Derchang Kau, Cupertino, CA (US);

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:

Holland & Hart LLP

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 13/0023 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 27/24 (2013.01); H01L 27/2427 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01);
Abstract

Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.

Find Patent Forward Citations

Lee, Jong-Won. (2017). Replacement materials processes for forming cross point memory (U.S. Patent No. 9659997). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9659997

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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