The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Mar. 27, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Jong-Won Lee, Boise, ID (US);
Gianpaolo Spadini, Los Gatos, CA (US);
Stephen W. Russell, Boise, ID (US);
Derchang Kau, Cupertino, CA (US);
Assignee:
MICRON TECHNOLOGY, INC., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/141 (2013.01); H01L 27/24 (2013.01); H01L 45/06 (2013.01); H01L 45/1246 (2013.01); H01L 45/1675 (2013.01);
Abstract
Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.